Design the circuit of the provided circuit image so that the transistor operates in saturation with $I_D=0.5 \mathrm{~mA}$ and $V_D=+3 \mathrm{~V}$. Let the enhancement-type PMOS transistor have $V_t=-1 \mathrm{~V}$ and $k_p^{\prime}(W / L)= 1 \mathrm{~mA} / \mathrm{V}^2$. Assume $\lambda=0$.